Except for be and be ( two - body ) , the r . m . s distances between two clusters and the ground binding energy show that the he structure model used is reasonable to some extent . the further exploration is necessary 从集团的均方根距离和这几个超核的基态结合能计算值来看，除了a9be和岩be两体结构外，我们所采用的a ， he结构模型在某种程度上具有一定的合理性。
The effect of an applied electric field on the binding energy of shallow donor impurities in rectangular cross section gaas qwws was presented by montes et al , by considering an infinite confinement potential and using a variational scheme 外加电场对矩形量子阱线中浅施主杂质束缚能的效应是由montes等人提出的，他们采用变分法讨论了无限深势阱的量子线结构。
By using the variational principle to determine the energy expectation value of the relativistic dirac - coulomb hamiltonian , all of the radial functions , configuration mixing coefficients , and the total binding energies can be determined automatically 通过对相对论dirac - fockhamilton量的期望值变分，可以自动的得到所有的径向波函数、组态混合系数以及总束缚能。
Due to the large exciton binding energy of 60mev , which ensures the high efficient excitonic emission at room temperature , it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices 由于氧化锌具有较高的激子束缚能( 60mev ) ，保证了其在室温下较强的激子发光，因而被认为是制作紫外半导体激光器的合适材料。
Firstly the binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field will be displayed . then how to use the nuclear spin as the quantum bit will be given 首先研究了垂直磁场下透镜型量子点( gaas / in1 - xgaxas )掺入类氢杂质后基态能和结合能，然后讨论了如何利用量子点中杂质核自旋构造量子位。
Van der waals ( vdw ) complexes are weak bonding complexes formed by atoms or molecules through interaction of electric multipole moments and dispersion forces . these complexes are characterized by their comparatively low binding energy ( 100 - 1000cm - 1 ) 范德瓦尔斯( vdw )复合物是原子或分子间通过多极矩和色散相互作用形成的弱键能复合物，它们的键能比较弱，一般为100 1000cm ~ ( - 1 ) 。
Zinc oxide ( zno ) is an important wide band gap ( eg = 3 . 37ev ) semiconductor materials , its exciton binding energy is 60mev . these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature 氧化锌( zno )是一种重要的宽禁带( eg = 3 . 37ev )半导体材料,其激子束缚能高达60mev ,在室温紫外光电器件方面有巨大的应用潜力。
In the second part , we discuss the binding energy of the impurity in finite gaas / gai . xalxas quantum wire in the first place , in which the dismatch of effective mass and dielectric constant between the well and the barrier is taken into account 在第二部分，首先讨论了有限深gaas ga _ ( 1 - x ) al _ xas量子阱线中杂质态的束缚能，其中考虑到了阱垒中电子有效质量及材料中介电常数的失配性。
Annealing of the er - covered si ( 00l ) surfaces to 600 oc results in the emergence of a new component with a 1 . 2 ev energy shift towards lower binding energy in the si 2p core level spectrum , which is indicative of the presence of some sort of er silicides 同时，当覆盖了铒的样品被退火至600 ，在硅2p3 / 2芯能级峰的低结合能端约1 2ev处出现了一个新的峰，并被确认为来自于铒硅化物。
Most of researches were focused on the ground binding energies foe a = 5 - 17 with the same potential in the shell model , that some of the computation were consistent with their experimental values , others below the lower limit of them and others beyond the higher limit 在壳模型中，用统一的相互作用势研究了核子数a = 5 - 17的超核的基态结合能，有部分超核计算值拟合实验值，有的偏离较大。
